unisonic technologies co., ltd pn2907a pnp silicon transistor www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r201-041.d pnp general purpose amplifier ? description this utc pn2907a is designed for use as a general purpose amplifier and switch requiring collector currents to 500 ma. ? ordering information ordering number pin assignment normal lead free plating halogen free package 12 3 packing PN2907A-AB3-R pn2907al-ab3-r pn2907ag-ab3-r sot-89 bc e tape reel pn2907a-t92-b pn2907al-t92-b pn2907ag-t92-b to-92 eb c tape box pn2907a-t92-k pn2907al-t92-k pn2907ag-t92-k to-92 eb c bulk
pn2907a pnp silicon transistor unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r201-041.d ? absolute maxium ratings (ta=25 c, unless otherwise specified.) parameter symbol ratings unit collector-emitter voltage v ceo -60 v collector-base voltage v cbo -60 v emitter-base voltage v ebo -5 v collector current-continuous i c -800 ma sot-89 350 mw power dissipation to-92 p d 625 mw junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: 1. these are steady stat e limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. 2. absolute maximum ratings are those values beyon d which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit sot-89 104 /w thermal resistance, junction to ambient to-92 ja 200 /w ? electrical characteristics (ta=25 c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0 -60 v collector-base breakdown voltage bv cbo i c =-10 a, i e =0 -60 v emitter-base breakdown voltage bv ebo i e =-10 a , i c =0 -5 v base cutoff current i b v cb =-30v, v eb =-0.5v -50 na collector cutoff current i cex v ce =-30v, v be =-0.5v -50 na collector cutoff current i cbo v cb =-50v, i e =0 v cb =-50v, i e =0, ta=150 c -0.02 -20 a a on characteristics ic=-0.1ma, v ce =-10v 75 ic=-1.0 ma, v ce =-10v 100 ic=-10 ma, v ce =-10v 100 ic=-150 ma, v ce =-10v (note) 100 300 dc current gain h fe ic=-500 ma, v ce =-10v (note) 50 collector-emitter sa turation voltage (note) v ce(sat) ic=-150ma, i b =-15ma ic=-500ma, i b =-50ma -0.4 -1.6 v v base-emitter satura tion voltage v be(sat) ic=-150ma, i b =-15ma (note) ic=-500ma, i b =-50ma -1.3 -2.6 v v small signal characteristics current gain ? bandwidth product f t ic=-50ma, v ce =-20v, f=100mhz 200 mhz output capacitance c ob v cb =-10v, i e =0, f=100khz 8 pf input capacitance c ib v eb =-2v, i c =0, f=100khz 30 pf switching characteristics turn-on time t on 45 ns delay time t dly 10 ns rise time t r vcc=-30v, ic=-150ma i b1 =-15ma 40 ns turn-off time t off 100 ns storage time t s 80 ns fall time t f vcc=-6v, ic=-150ma i b1 =i b2 =-15ma 30 ns note: pulse test: pulse width 300ms, duty cycle 2.0%
pn2907a pnp silicon transistor unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r201-041.d ? test circuits 1.0k 200 50 -30v -16v 0 200ns fig. 1 saturated turn-on switching time test circuit
pn2907a pnp silicon transistor unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r201-041.d ? typical characteristics base emitter voltage, v be(sat) (v) base emitter on voltage, v be(on) (v) collector current, i cbo (na) capacitance (pf)
pn2907a pnp silicon transistor unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r201-041.d ? typical characteristics(cont.) time (ns) time (ns) rise time vs collector and turn on base currents turn on base current, i bf (ma) -10 -100 -500 -1 -2 -5 -10 -20 -50 30ns collector current, i c (ma) 60ns t r =-15v ? typical characteristics for common emitter (f=1khz) common emitter characteristics -1 -50 0.1 1 2 5 collector current, i c (ma) -20 -10 -5 -2 0.2 0.5 relative to values at i c =10ma, char h oe h re h fe h ie v ce = -10v ta=25 common emitter characteristics -4 -20 0.8 1.1 collector voltage, v ce (v) -16 -12 -8 0.9 1 relative to values at v ce =10v, char h re h fe h ie h oe h re and h oe h ie h fe i c = -10ma ta=25 1.2 1.3
pn2907a pnp silicon transistor unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r201-041.d ? typical characteristics for common emitter(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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